We intend to purchase an inductively-coupled plasma reactive-ion etcher (ICP) for fabrication of various III-V semiconductor photonic nano-structures. The main purpose is to make submicron holes to form photonic-crystal membranes of gallium arsenide, which requires a combination of electron-beam lithography and ICP etching. Furthermore, the ICP will be used for deep etching of GaAs and selective etching using AlGaAs etch-stop layers.
Piesakieties Mercell un saņemiet paziņojumus par jaunākajiem iepirkumiem sev svarīgajās nozarēs 7 dienas bez maksas!