Aarhus University will be investing in one (1) Oxygen Plasma Source for INANO.
Reactive ion etching is known as an efficient technique for surface cleaning in semiconductor technology and surface science. The plasma sources that are used for the reactive etching are also commonly used for the so-called ion-assisted deposition of thin films. There are several examples where this technique was successfully implemented and used in the surface science experiments on thin films growth and oxidation under UHV conditions. Thus, we expect that installation of an advanced plasma source in our UHV setup will significantly extend our experimental capabilities in terms of oxide surface preparation and growth of ultra-thin oxide films. We summarised minimal requirements in the attached form that must be fulfilled to meet our experimental needs.